mixers - double-balanced - chip 4 4 - 32 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc203 gaas mmic double-balanced mixer, 14 - 23 ghz v03.1007 general description features functional diagram conversion loss: 10 db lo / rf isolation: 38 db passive: no dc bias required die size: 1.49 x 0.89 x 0.1 mm electrical specifi cations, t a = +25 c, lo drive = +15 dbm typical applications the hmc203 is ideal for: ? dbs & satcom ? microwave radio ? military & space ? radar & ew ? test equipment & sensors the hmc203 chip is a miniature double-balanced mixer which can be used as an upconverter or down- converter. excellent isolations are provided by on-chip baluns, which require no external components and no dc bias. the mixer chip can be integrated directly into mmic hybrid applications. unless otherwise stated, all data was measured with the mixer mounted in a mmic test fi xture. the mmic was connected to thin fi lm 50 ohm transmission lines with 1 mil diameter wirebonds of <10 mils in length. parameter min. typ. max. min. typ. max. units frequency range, rf & lo 14 - 23 15 - 21 ghz frequency range, if dc - 2 dc -2 ghz conversion loss 10 12 8.5 10 db noise figure (ssb) 10 12 8.5 10 db lo to rf isolation 30 38 30 38 db lo to if isolation 35 45 35 45 db rf to if isolation 12 17 12 17 db ip3 (input) 18 18 dbm ip2 (input) 40 40 dbm 1 db gain compression (input) 7 7 dbm
mixers - double-balanced - chip 4 4 - 33 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion loss vs lo drive isolation, lo = +15 dbm conversion loss @ +85 c vs. lo drive conversion loss @ -55 c vs lo drive if bandwidth lo = 18 ghz @ +15 dbm rf coplanar probe data lo = +12 dbm -20 -15 -10 -5 0 13 15 17 19 21 23 25 +8 dbm +10 dbm +12 dbm +15 dbm conversion loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 0246 +8 dbm +10 dbm +12 dbm +15 dbm conversion loss (db) if frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 conversion loss and isolation (db) frequency ( ghz ) conversion loss lo/rf iso rf/if iso lo/if iso -20 -15 -10 -5 0 13 15 17 19 21 23 25 +8 dbm +10 dbm +12 dbm +15 dbm conversion loss (db) frequency (ghz) -20 -15 -10 -5 0 13 15 17 19 21 23 25 +8 dbm +10 dbm +12 dbm +15 dbm conversion loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 13 15 17 19 21 23 25 rf/if lo/if lo/rf isolation (db) frequency (ghz) hmc203 v03.1007 gaas mmic double-balanced mixer, 14 - 23 ghz
mixers - double-balanced - chip 4 4 - 34 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings rf / if input +13 dbm lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. bond pads are .004 square. 4. bond pad spacing center to center is .006. 5. backside metallization: gold. 6. bond pad metallization: gold. 7. backside metal is ground. 8. connection not required for unlabeled bond pads. die packaging information [1] standard alternate wp-8 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc203 v03.1007 gaas mmic double-balanced mixer, 14 - 23 ghz electrostatic sensitive device observe handling precautions
mixers - double-balanced - chip 4 4 - 35 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1rf this pin is ac coupled and matched to 50 ohms. 2lo this pin is ac coupled and matched to 50 ohms. 3if this pin is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/sink more than 2 ma of current or die non-function and possible die failure will result. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc203 v03.1007 gaas mmic double-balanced mixer, 14 - 23 ghz handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm).
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